High-linearity switched-capacitor circuits in digital CMOS technologies
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High-linearity switched-capacitor circuits in digital CMOS technologies

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Published .
Written in English

Subjects:

  • Switched capacitor circuits.,
  • Metal oxide semiconductors, Complementary.

Book details:

Edition Notes

Statementby Hirokazu Yoshizawa.
The Physical Object
Pagination191 leaves, bound :
Number of Pages191
ID Numbers
Open LibraryOL15479667M

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Design techniques are described for the realization of precision high linearity switched-capacitor (SC) stages constructed entirely from MOS transistors. T MOSFET-only switched-capacitor circuits in digital CMOS technology - IEEE Journals & MagazineCited by: Graduation date: In this thesis, novel design techniques have been proposed for implementing high-linearity SC circuits in a standard digital CMOS process. They use nonlinear MOSFET capacitors instead of linear double-poly capacitors. H. Yoshizawa and G. C. Temes, “High-linearity switched-capacitor circuits in digital CMOS technology”, Proceedings of the IEEE International Symposium on Circuits and Systems, pp. –, Google ScholarAuthor: Kritsapon Leelavattananon, Chris Toumazou. Title: High-Linearity Switched-Capacitor Circuits in Digital CMOS Technologies. Abstract approved: Gabor C. Temes. In this thesis, novel design techniques have been proposed for implementing high-linearity SC circuits in a standard digital CMOS process. They use nonlinear MOSFET capacitors instead of linear double-poly capacitors.

A low-voltage high-speed high-linearity MOSFET-only analog bootstrapped switch for sample-and-hold circuits Abstract: In this paper, a low-voltage high-speed high-linearity MOSFET-only analog bootstrapped switch for sample-and-hold circuits is successfully designed and implemented in TSMC μm standard digital complementary metal-oxide-semiconductor (CMOS) technology. A design strategy of low-voltage high-linearity MOSFET-only ΣΔ modulators in standard digital CMOS technology is presented. The modulators use substrate-biased MOSFETs in the depletion region as. From Table 1, we note that present circuit achieves a very good trade between linearity and gain (IIP3 = dBm and GC = dB), Lower Noise, such as NF = dB is the lower of values after NF of, and a miniaturized CMOS technology (65 nm) whilst keeping power consumption the lowest (after,,).Although a polarization used is equal to V, relatively large compared to references made Cited by: 7. One highly successful reference point for the implementation of a switched-capacitor circuit us- ing low external voltage IC is described in [l]. B. Switched-opamp technique-This is a fairly re- cent method that suggests a way to allow a true low-voltage operation, without the use of clock- voltage boosters.

Affiliation: Delft University of Technology, Delft, the Netherlands. Publication Topics: CMOS integrated circuits,low-power electronics,sigma-delta modulation,CMOS digital integrated circuits,analogue-digital conversion,comparators (circuits),flip-flops,integrated circuit modelling,microwave integrated circuits,quantisation (signal),switched capacitor networks,ultra wideband technology. The compatibility of the switched-capacitor technique with standard digital CMOS processes utilising MOSFET gate capacitance has recently been investigated. Owing to its high voltage-dependence, a technique for enhancing linearity which is suitable for non-delay-free circuits is proposed. The technique was verified by simulation to demonstrate its effectiveness for linearity by: 7. CMOS: Analog Integrated Circuits: High-Speed and Power-Efficient Design describes the important trends in designing these analog circuits and provides a complete, in-depth examination of design techniques and circuit architectures, emphasizing practical aspects of integrated circuit by: • Switched-capacitor circuits can be built in any “digital” CMOS process, and can therefore be integrated together with complex digital functions ck vin vout H. Yoshizawa et al., "MOSFET-Only Switched-Capacitor Circuits in Digital CMOS Technology", IEEE JSSC, vol. 34, no. 6, June , pp. File Size: 1MB.